Advanced Device Physics
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This course will focus for a large part on MOSFET and CMOS, but also on heterojunction BJT, and photonic devices. First non-ideal characteristics of MOSFETs will be discussed, like channel-length modulation and short-channel effects. We will also pay attention to threshold voltage modification by varying the dopant concentration. Further, MOS scaling will be discussed. A combination of an n-channel and p-channel MOSFET is used for CMOS devices that form the basis for current digital technology.
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